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PHOTODIODE Si photodiode S6428-01, S6429-01, S6430-01, S7505-01 RGB color sensor S6428-01, S6429-01 and S6430-01 are color sensors designed to respectively detect monochromatic colors of blue (p=460 nm), green (p=540 nm) and red (p=660 nm). S7505-01 use a 3-channel (RGB) photodiode having blue, green and red sensitivities, and is molded into a surface-mountable package. Features Applications S6428-01: 400 to 540 nm (p=460 nm) S6429-01: 480 to 600 nm (p=540 nm) S6430-01: 590 to 720 nm (p=660 nm) l Insensitive to near IR range l High sensitivity S6428-01: 0.22 A/W Typ. (=p) S6429-01: 0.27 A/W Typ. (=p) S6430-01: 0.45 A/W Typ. (=p) l Low dark current l Plastic package (6 x 8 mm) l Spectral response range S6428-01, S6429-01, S6430-01 l White balance adjustment l Color identification l Projector and TV brightness level detection l Color control l Light source color temperature detection l 3 ch (RGB) Si photodiode l Surface mountable plastic package (9 x 9.6 mm) l High sensitivity s General ratings / Absolute maximum ratings Di mensional outline Active area size (mm) S6428-01 S6429-01 S6430-01 S7505-01 2.4 x 2.8 Effective active area (mm 2) 6.7 10 Green, red: 2.25 Green, red: 1.5 x 1.5 Blue : 1.5 x 1.5 (2 elements) Blue : 4.5 -10 to +60 -20 to +70 Absolute maximum ratings Storage Operating Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C) S7505-01 Type No. s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Peak Spectral response sensitivity range wavelength p (nm) 460 540 660 460 540 620 RELATIVE SENSITIVITY (%) Type No. Photo sensitivity S =p (A/W) 0.22 0.27 0.45 0.18 0.23 0.16 Dark current ID VR=1 V Typ. (pA) 5 Max. (pA) 20 Temp. coefficient of ID (times/C) Rise time tr VR=0 V RL=1 k 10 to 90 % (s) (nm) S6428-01 400 to 540 S6429-01 480 to 600 S6430-01 590 to 720 Blue 400 to 540 S7 50 5-01 Green 480 to 600 Red 590 to 720 *1: All elements. *2: Defined as shown in the figure at right. Terminal capacitance Ct VR=0 V f=10 kHz Typ. Max. (pF) (pF) 200 400 300 150 Spectral response half width FWHM * 2 (nm) 90 70 90 90 60 70 1.12 10 * 1 200 *1 0.5 150 80 100 50 FWHM WAVELENGTH (nm) KSPDC0031EA Si photodiode S6428-01, S6429-01, S6430-01, S7505-01 s Spectral response (S7505-01) 0.3 (Typ. Ta=25 C) (Typ. Ta=25 C) s Spectral response (S6428-01, S6429-01, S6430-01) 0.6 PHOTO SENSITIVITY (A/W) PHOTO SENSITIVITY (A/W) 0.5 QE=100 % S6430-01 (Red) QE=100 % Green 0.2 0.4 0.3 S6429-01 (Green) Blue Red 0.1 0.2 S6428-01 (Blue) 0.1 0 300 400 500 600 700 800 900 1000 1100 1200 0 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) KSPDB0141EC WAVELENGTH (nm) KMPDB0217EA s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 C) s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 C) 100 pA TERMINAL CAPACITANCE DARK CURRENT S6428-01, S6429-01, S6430-01 S7505-01 10 pA 100 pF S7505-01 (Blue) 1 pA S6428-01, S6429-01 S6430-01 100 fA 0.01 S7505-01 (Red, Green) 0.1 1 10 100 10 pF 0.1 1 10 100 REVERSE VOLTAGE (V) KSPDB0142EC REVERSE VOLTAGE (V) KSPDB0143EC s Dimensional outlines (unit: mm) S6428-01, S6429-01, S6430-01 (8.5) FILTER S7505-01 1.5 0.4 INDEX (C 0.7) 9.0 * 1.5 0.4 3.40.3 0.8 (6 x) 0.4 BB GR 2.54 2.54 6.0 +0 -0.3 9.6 * (2 x) 10 ACTIVE AREA 2.8 x 2.4 ACTIVE AREA FILTER PHOTOSENSITIVE SURFACE 1.5 (2 x) 10 1.5 0.2 2.2 +0 -0.1 +0.2 4.5 -0.5 8.0 +0 -0.1 12.0 0.3 0.7 0.3 (2 x) 10 FILTER PHOTOSENSITIVE SURFACE 0.7 0.3 0.3 1.4 1.0 1.5 0.2 0.55 0.85 0.6 Blue Blue Green Red 0.2 Tolerance unless otherwise noted: 0.15 0.1 0.1 1.5 7.8 -0.1 +0 1.5 (2 x) 10 DETAILS OF PHOTODIODE KSPDA0056EA ANODE (Blue) CATHODE COMMON ANODE (Green) ANODE (Red) CATHODE COMMON NC Tolerance unless otherwise noted: 0.1 Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 KMPDA0073ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1013E04 Jul. 2003 DN |
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